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タイトル
  • en Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes
作成者
    • en Satoh, H.
    • en Sugawara, K.
アクセス権 open access
権利情報
  • en Copyright © 2006 American Institute of Physics
主題
  • NDC 549.9
内容注記
  • Abstract en Nanoscale amorphous marks have been produced in crystalline Ge2Sb2Te5 films using an atomic-force microscope (AFM) and a scanning-tunneling microscope (STM) through electrical phase changes. Voltage pulses with duration of 5–100 ns applied by metal probes of the AFM and the STM can produce, respectively, high-resistance regions and deformations, the smallest sizes being ~10 and ~100 nm in diameter. Raman-scattering spectra demonstrate that these marks are amorphous. The AFM mark can be erased by applying longer pulses. Formation processes of the marks are considered from electrothermal and thermodynamic aspects.
出版者 en American Institute of Physics
日付
    Issued2006-01-15
言語
  • eng
資源タイプ journal article
出版タイプ VoR
資源識別子 HDL http://hdl.handle.net/2115/5420
関連
  • URI http://www.aip.org/
  • isIdenticalTo DOI https://doi.org/10.1063/1.2163010
収録誌情報
    • PISSN 0021-8979
      • en Journal of Applied Physics
      • 巻99 開始ページ024306
ファイル
    • fulltext JAP99.pdf
    • 396.42 KB (application/pdf)
      • Issued2006-01-15
コンテンツ更新日時 2023-07-26