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タイトル
  • Site-selective silicon adatom desorption using femtosecond laser pulse pairs and scanning tunneling microscopy
作成者

Futaba, D. N.

Morita, R.

Yamashita, M.

Tomiyama, S.

Shigekawa, H.

権利情報
    • Copyright © 2003 American Institute of Physics
主題
  • NDC 431.8
内容注記
Other
  • We performed an experimental study of silicon adatom desorption from the Si(111)-737 surface using femtosecond laser pulse pair excitation with 80 fs pulse duration, 800 nm center wavelength, 300 mW average power, and a 100 MHz repetition rate. Using scanning tunneling microscopy, we directly recorded the desorption characteristics at each delay setting for each of the four adatom binding sites. The study revealed a preferential dependence between the delay time and the adatom sites within a 66.6–1000 fs delay range.
出版者American Institute of Physics
日付 Issued 2003-09-22
言語eng
資源タイプjournal article
出版タイプVoR
資源識別子 URI http://hdl.handle.net/2115/5874
関連
  • isIdenticalTo DOI https://doi.org/10.1063/1.1613361
収録誌情報
    • ISSN 0003-6951
    • APPLIED PHYSICS LETTERS
    83(12), 2333-2335
ファイル
コンテンツ更新日時2019-10-09T06:46:10Z