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タイトル
  • en Femtosecond pump–probe studies of phonons and carriers in bismuth under high pressure
作成者
    • en Kasami, M.
    • en Ogino, T.
    • en Mishina, T.
アクセス権 open access
主題
  • Other en coherent phonon
  • Other en photo-excited carrier
  • Other en bismuth
  • Other en high pressure
  • Other en band-overlapping
  • NDC 425
内容注記
  • Abstract en We investigate the high-pressure phase of Bi under hydrostatic pressure using pump-probe spectroscopy at pressures up to 3.0 GPa, and we observe coherent phonons signal and relaxation signal of photo-excited carriers at Bi(II) and Bi(III) phases. The pressure dependence of the coherent phonons shows that the amplitude of coherent phonons is extremely small and the frequency of coherent phonons changes at high-pressure phases. As results from our experiment, we obtain its frequencies are 2.5 and 2.2 THz at Bi(II) and Bi(III), respectively. Furthermore, photo-excited carrier relaxation indicates drastic changes near 2.5 GPa. Bismuth transforms from semimetal to semiconductor near 2.5 GPa, and band-overlapping between at L-point and at T-point disappears. We consider that the drastic changes of the photo-excited carrier relaxation are strongly correlated with the band-overlapping disappearing.
出版者 en Elsevier
日付
    Issued2006-07
言語
  • eng
資源タイプ journal article
出版タイプ AM
資源識別子 HDL http://hdl.handle.net/2115/14424
関連
  • URI http://www.sciencedirect.com/science/journal/00222313
  • isVersionOf DOI https://doi.org/10.1016/j.jlumin.2006.01.028
収録誌情報
    • PISSN 0022-2313
      • en Journal of Luminescence
      • 119 開始ページ428 終了ページ432
ファイル
コンテンツ更新日時 2023-07-26