| タイトル |
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Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure
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| 作成者 |
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| アクセス権 |
open access |
| 主題 |
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Other
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Photoelectric conversion
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Other
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Porous structure
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Indium phosphide (InP)
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Platinum
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Electrochemical process
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Scanning electron microscopy
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Optical Reflectance
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Current-voltage measurements
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Electrochemical method
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Current-voltage (I-V)
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Other
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SEM
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NDC
547
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| 内容注記 |
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Abstract
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A photoelectric-conversion device-based on an InP porous structure utilizing the large surface area inside pores and the low reflectance on the porous surface-is proposed. The InP walls inside the pores are covered with thin platinum films that form a Schottky barrier yielding an electric field that separates photo carriers generated under illumination. The coverage of the platinum film and its optical reflectance depended largely on the surface morphology of the porous structure. Removal of the irregular top layer formed at the initial stage of the pore formation effectively improved the coverage of the platinum film, which showed a very low optical reflectance (i.e., below 3.2%). According to current-voltage measurements under illumination, the platinum/porous InP showed larger photocurrents and higher responsivity than those of a reference planar sample.
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| 出版者 |
en
Elsevier B.V.
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| 日付 |
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| 言語 |
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| 資源タイプ |
journal article |
| 出版タイプ |
AM |
| 資源識別子 |
HDL
http://hdl.handle.net/2115/49673
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| 関連 |
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isVersionOf
DOI
https://doi.org/10.1016/j.tsf.2012.04.031
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| 収録誌情報 |
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Thin Solid Films
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巻520
号17
開始ページ5710
終了ページ5714
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| ファイル |
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| コンテンツ更新日時 |
2023-07-26 |
