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タイトル
  • en Enhanced Photon Generation in a Nb/n-InGaAs/p-InP Superconductor/Semiconductor-Diode Light Emitting Device
作成者
    • en Kuramitsu, S.
    • en Hayashi, Y.
    • en Akazaki, T.
    • en Hanamura, E.
    • en Inoue, R.
    • en Takayanagi, H.
    • en Hermannstädter, C.
    • en Kumano, H.
アクセス権 open access
権利情報
  • en © 2011 American Physical Society
内容注記
  • Abstract en We experimentally demonstrate Cooper pairs’ drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode. The recombination of a Cooper pair with p-type carriers dramatically increases the photon generation probability of a light-emitting diode in the optical-fiber communication band. The measured radiative decay time rapidly decreases with decreasing temperature below the superconducting transition temperature of the niobium electrodes. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.
出版者 en American Physical Society
日付
    Issued2011-10
言語
  • eng
資源タイプ journal article
出版タイプ VoR
資源識別子 HDL http://hdl.handle.net/2115/50826
関連
  • isIdenticalTo DOI https://doi.org/10.1103/PhysRevLett.107.157403
  • PMID 22107319
収録誌情報
    • PISSN 0031-9007
    • EISSN 1079-7114
    • NCID AA00773679
      • en Physical Review Letters
      • 107 15 開始ページ157403-1 終了ページ157403-5
ファイル
コンテンツ更新日時 2023-07-26