タイトル |
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Enhanced Photon Generation in a Nb/n-InGaAs/p-InP Superconductor/Semiconductor-Diode Light Emitting Device
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作成者 |
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アクセス権 |
open access |
権利情報 |
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en
© 2011 American Physical Society
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内容注記 |
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Abstract
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We experimentally demonstrate Cooper pairs’ drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode. The recombination of a Cooper pair with p-type carriers dramatically increases the photon generation probability of a light-emitting diode in the optical-fiber communication band. The measured radiative decay time rapidly decreases with decreasing temperature below the superconducting transition temperature of the niobium electrodes. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.
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出版者 |
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American Physical Society
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日付 |
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言語 |
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資源タイプ |
journal article |
出版タイプ |
VoR |
資源識別子 |
HDL
http://hdl.handle.net/2115/50826
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関連 |
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isIdenticalTo
DOI
https://doi.org/10.1103/PhysRevLett.107.157403
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PMID
22107319
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収録誌情報 |
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PISSN
0031-9007
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EISSN
1079-7114
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NCID
AA00773679
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Physical Review Letters
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巻107
号15
開始ページ157403-1
終了ページ157403-5
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ファイル |
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コンテンツ更新日時 |
2023-07-26 |