| タイトル |
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en
Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices
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| 作成者 |
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| アクセス権 |
open access |
| 主題 |
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Other
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Porous structure
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Other
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Indium phosphide (InP)
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Other
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Optical absorption property
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Other
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Photocurrent
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Other
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Photoelectric conversion device
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NDC
547
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| 内容注記 |
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Abstract
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We investigated the optical absorption properties of InP porous structures formed by the electrochemical process using photoelectric conversion (PC) devices formed on p-n junction substrates. The photocurrent measurements revealed that the current from PC devices changed in response to the incident light power and the thickness of the top layer on the p-n interface. Since the photocarriers contributing to the observed photocurrents are excited by the photons reaching the p-n interface through the top layer, the photocurrents give us information on the optical absorption properties of the top layer. The photocurrents observed on a porous device with a porous structure in the top layer were lower than that of a non-porous device, indicating that the absorption properties of InP were enhanced after the formation of porous structures. This phenomenon can be explained in terms of absorption coefficient, α, increased by the light scattering and the sub-bandgap absorption in the porous layer. (C) 2013 Elsevier B.V. All rights reserved.
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| 出版者 |
en
Elsevier Science Bv
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| 日付 |
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| 言語 |
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| 資源タイプ |
journal article |
| 出版タイプ |
AM |
| 資源識別子 |
HDL
http://hdl.handle.net/2115/53128
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| 関連 |
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isVersionOf
DOI
https://doi.org/10.1016/j.apsusc.2013.04.046
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| 収録誌情報 |
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PISSN
0169-4332
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NCID
AA10503400
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en
Applied Surface Science
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巻279
開始ページ116
終了ページ120
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| ファイル |
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| コンテンツ更新日時 |
2023-07-26 |
