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タイトル
  • en Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces
作成者
アクセス権 open access
権利情報
  • en "This is the peer reviewed version of the following article: Physica Status Solidi (A) : applications and materials science, Volume 212, Issue 5, pages 1075–1080, May 2015, which has been published in final form at http://doi.org/10.1002/pssa.201431652 . This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving."
主題
  • Other en Al2O3
  • Other en AlGaN
  • Other en dry etching
  • Other en high electron mobility transistors
  • Other en interface states
  • Other en metal-insulator-semiconductor structures
  • NDC 549
内容注記
  • Abstract en We have investigated the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting interface properties of the Al2O3/AlGaN/GaN structures. The experimentally measured capacitance-voltage (C-V) characteristics were compared with those calculated taking into account the interface states density at the Al2O3/AlGaN interface. As a complementary method, photoassisted C-V method utilizing photons with energies less than the bandgap of GaN was also used to probe the interface state density located near AlGaN midgap. It was found that the ICP etching of the AlGaN surface significantly increased the interface state density at the Al2O3/AlGaN interface. It is likely that ICP etching induced the interface roughness, disorder of chemical bonds and formation of various type of defect complexes including nitrogen-vacancy-related defects at the AlGaN surface, leading to poor C-V curve due to higher interface state density at the Al2O3/AlGaN interface.
出版者 en Wiley-Blackwell
日付
    Issued2015-05
言語
  • eng
資源タイプ journal article
出版タイプ AM
資源識別子 HDL http://hdl.handle.net/2115/61442
関連
  • isVersionOf DOI https://doi.org/10.1002/pssa.201431652
収録誌情報
    • PISSN 1862-6300
      • en Physica status solidi A applications and materials science
      • 巻212 号5 開始ページ1075 終了ページ1080
ファイル
コンテンツ更新日時 2023-07-26