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Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion
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| 作成者 |
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| アクセス権 |
open access |
| 権利情報 |
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en
©2015 American Physical Society
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| 主題 |
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| 内容注記 |
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Abstract
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Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001) alpha-Al2O3, (11 (2) over bar0) alpha-Al2O3, and (001) TiO2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S) from similar to 200 to 23 mu VK-1, along with a sharp drop in electrical resistivity (rho), due to the transition from an insulator to a metal. The MI transition temperatures observed both in rho(T-rho) and S(T-S) for the VO2 films systematically decrease with lattice shrinkage in the pseudorutile structure along the c axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset T-S, where the insulating phase starts to become metallic, is much lower than the onset T-rho. This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in rho measurements. Consequently, S measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in VO2.
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| 出版者 |
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American Physical Society
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| 日付 |
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| 言語 |
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| 資源タイプ |
journal article |
| 出版タイプ |
VoR |
| 資源識別子 |
HDL
http://hdl.handle.net/2115/59763
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| 関連 |
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DOI
https://doi.org/10.1103/PhysRevB.92.035302
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| 収録誌情報 |
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Physical review B
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巻92
号3
開始ページ35302-1
終了ページ35302-7
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| ファイル |
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| コンテンツ更新日時 |
2023-07-26 |
