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Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching
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| 作成者 |
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| アクセス権 |
open access |
| 権利情報 |
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© 2016 The Japan Society of Applied Physics
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| 主題 |
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| 内容注記 |
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Abstract
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We aimed to develop a photoassisted electrochemical etching process for the formation of GaN porous structures. Pore linearity and depth controllability were strongly affected by the anode voltage. In addition, the use of light with an energy below the band gap played an important role in controlling the pore diameter. Spectro-electrochemical measurements revealed that the high electric field induced at the GaN/electrolyte interface caused a redshift of the photoabsorption edge. This specific phenomenon can be explained by a theoretical calculation based on the Franz-Keldysh effect. On the basis of the results of our experimental and theoretical analyze, we propose a formation model for GaN porous structures. We also note that the application of the Franz-Keldysh effect is useful in controlling the structural properties of GaN porous structures.
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| 出版者 |
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IOP Publishing
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| 日付 |
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| 言語 |
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| 資源タイプ |
journal article |
| 出版タイプ |
AM |
| 資源識別子 |
HDL
http://hdl.handle.net/2115/64688
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| 関連 |
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isVersionOf
DOI
https://doi.org/10.7567/JJAP.55.04EJ12
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| 収録誌情報 |
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Japanese Journal of Applied Physics (JJAP)
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巻55
号4
開始ページ04
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| ファイル |
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| コンテンツ更新日時 |
2023-07-26 |
