| タイトル |
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en
Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications
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| 作成者 |
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| アクセス権 |
open access |
| 権利情報 |
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| 主題 |
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Other
en
anisotropic etching
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Other
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electrochemical etching
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Other
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GaN
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Other
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nano structure
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Other
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photocatalyst
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Other
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photoelectrode
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Other
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porous structure
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Other
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tetramethylammonium hydroxide (TMAH)
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Other
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water splitting
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NDC
549
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| 内容注記 |
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Abstract
en
A low-damaged wet process utilizing electrochemical (EC) etching and subsequent chemical etching has been developed for the fabrication of GaN porous structures. Superior controllability in depth and diameter could be obtained by achieving anisotropic nature of the vertical direction to the substrate by EC etching and horizontal direction by tetramethylammonium hydroxide (TMAH) etching, respectively. The optical and photoelectrochemical properties of GaN porous structures were very sensitive to the structural properties. Photoreflectance measurement revealed that porous sample had an effective refractive index that could be controlled by TMAH etching time. In photoelectrochemical measurement, the incident-photon-to-current conversion efficiency (IPCE) was dramatically enhanced to as high as 91% by the formation of porous structures. A series of experimental results were consistently explained by the change of thickness of pore wall and width of space charge region.
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| 出版者 |
en
The Electrochemical Society (ECS)
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| 日付 |
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| 言語 |
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| 資源タイプ |
journal article |
| 出版タイプ |
VoR |
| 資源識別子 |
HDL
http://hdl.handle.net/2115/66290
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| 関連 |
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isIdenticalTo
DOI
https://doi.org/10.1149/2.0771707jes
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| 収録誌情報 |
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PISSN
0013-4651
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EISSN
1945-7111
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en
Journal of The Electrochemical Society
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巻164
号7
開始ページH477
終了ページH483
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| ファイル |
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| コンテンツ更新日時 |
2023-07-26 |
