一覧に戻る

タイトル	en Robustness of Voltage-induced Magnetocapacitance
作成者	en Kaiju, Hideo NRID 1000070396323 en Misawa, Takahiro en Nagahama, Taro en Komine, Takashi en Kitakami, Osamu en Fujioka, Masaya en Nishii, Junji NRID 1000060357697 en Xiao, Gang
アクセス権	open access
権利情報	https://creativecommons.org/licenses/by/4.0/ en Creative Commons Attribution 4.0 International
主題	NDC 427
内容注記	Abstract en One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co40Fe40B20/Mgo/Co40Fe40B20 . We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the bipolar biasing regions using Debye-Frohlich model combined with quartic barrier approximation and spin-dependent drift-diffusion model. Based on our calculation, we predict that the voltage-induced TMC ratio could reach 1100% in MTJs with a corresponding TMR value of 604%. Our work has provided a new understanding on the voltage-induced AC spin-dependent transport in MTJs. The results reported here may open a novel pathway for spintronics applications, e.g., non-volatile memories and spin logic circuits.
出版者	en Nature Publishing Group
日付	Issued2018-10-02
言語	eng
資源タイプ	journal article
出版タイプ	VoR
資源識別子	HDL http://hdl.handle.net/2115/71993
関連	isIdenticalTo DOI https://doi.org/10.1038/s41598-018-33065-y
収録誌情報	PISSN 2045-2322 en Scientific reports 巻8 開始ページ14709
ファイル	fulltext s41598-018-33065-y.pdf 2.07 MB (application/pdf) Issued2018-10-02
コンテンツ更新日時	2023-07-26