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Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors
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metadata only access |
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Abstract
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Recessed-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) were fabricated by utilizing a photoelectrochemical (PEC) etching and a post-metallization annealing (PMA) process. In order to demonstrate the device performance and reliability, both electrical and optical electroluminescence (EL) properties were evaluated. The capacitance-voltage (C-V) characteristic showed that the PEC etching and subsequent PMA process enhanced the gate control of two-dimensional electron gas density. The PEC-etched-gate AlGaN/GaN MIS-HEMT showed the smallest sub-threshold slope of all the samples including planar-gate and inductively coupled plasma-etchedgate devices. Furthermore, the PEC-etched devices showed an extremely low 10(-11) A mm(-1) gate leakage current with no spot-like EL. These results indicated that the PEC etching and subsequent PMA process improved the electrical properties of the Al2O3/AlGaN interface, resulting in enhanced device performance of the AlGaN/GaN MIS-HEMTs. (C) 2019 The Japan Society of Applied Physics
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IOP Publishing
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| 資源タイプ |
journal article |
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NA |
| 資源識別子 |
HDL
http://hdl.handle.net/2115/75278
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DOI
https://doi.org/10.7567/1347-4065/ab06b9
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Japanese Journal of Applied Physics (JJAP)
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巻58
開始ページSCCD20
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| コンテンツ更新日時 |
2023-07-26 |
