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タイトル
  • en Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions
作成者
    • en Toguchi, Masachika
    • en Komatsu, Yuto
    • en Uemura, Keisuke
アクセス権 open access
権利情報
  • en © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
主題
  • Other en Etching
  • Other en Aluminum gallium nitride
  • Other en Wide band gap semiconductors
  • Other en HEMTs
  • Other en MODFETs
  • Other en Pins
  • Other en AlGaN
  • Other en GaN heterostructures
  • Other en HEMTs
  • Other en low damage etching
  • Other en photo-electrochemical reactions
  • NDC 540
内容注記
  • Abstract en This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricating recessed-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). Selecting the proper light wavelength and voltage conditions enabled PEC etching on AlGaN/GaN heterostructures to produce smooth and flat surfaces. Self-termination phenomena observed under optimal PEC condition were useful for precisely controlling the etching depth in the AlGaN layer. Two types of HEMTs, i.e., Schottky-gate and metal-insulator-semiconductor (MIS)-gate, were fabricated. A recessed-gate AlGaN/GaN structure fabricated with PEC etching showed positive threshold voltage, and its variation was very small with a standard deviation of only 0.019 V for the Schottky-gate HEMTs and 0.032 V for the MIS-gate HEMTs. A recessed-gate structure with PEC etching showed better current transport controllability with a small subthreshold-slope than that of planar-gate and dry-etched-gate AlGaN/GaN structures.
出版者 en IEEE en Institute of Electrical and Electronics Engineers
日付
    Issued2019-11
言語
  • eng
資源タイプ journal article
出版タイプ AM
資源識別子 HDL http://hdl.handle.net/2115/76691
関連
  • isVersionOf DOI https://doi.org/10.1109/TSM.2019.2934727
収録誌情報
    • PISSN 0894-6507
    • NCID AA10690454
      • en IEEE transactions on semiconductor manufacturing
      • 巻32 号4 開始ページ483 終了ページ488
ファイル
コンテンツ更新日時 2023-07-26