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タイトル	en Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices
作成者	en Horikiri, Fumimasa en Fukuhara, Noboru en Ohta, Hiroshi en Asai, Naomi en Narita, Yoshinobu en Yoshida, Takehiro en Mishima, Tomoyoshi en Toguchi, Masachika en Miwa, Kazuki en Sato, Taketomo NRID 1000050343009
アクセス権	open access
権利情報	en © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
主題	Other en Gallium nitride Other en etching Other en photoelectrochemistry Other en trench fabrication Other en recess Other en power devices NDC 540
内容注記	Abstract en Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than 1 mu m, with high accuracy. The aspect ratio (depth/width) of a 3.3-mu m-wide trench with a PEC etching depth of 24.3 mu m was 7.3. These results demonstrate the excellent potential of PEC etching for fabricating deep trenches in vertical GaN devices. Furthermore, we simplified the PEC etching technology to permit its use in a wafer-scale process. We also demonstrated simple contactless PEC etching technologies for the manufacture of power and RF devices. A trench structure was fabricated in a GaN-on-GaN epilayer by simple contactless PEC etching. The role of the cathodic reaction in contactless PEC etching is discussed in relation to the application of a GaN HEMT epilayer on a semi-insulating substrate. Fortunately, the GaN HEMT structure contains an ohmic electrode that can act as a cathode in contactless PEC etching, thereby permitting the recess etching of a GaN HEMT epilayer grown on a semi-insulating SiC substrate. These results indicate that PEC etching technologies are becoming suitable for use in the fabrication of practical GaN power and RF devices.
出版者	en IEEE en Institute of Electrical and Electronics Engineers
日付	Issued2019-11
言語	eng
資源タイプ	journal article
出版タイプ	AM
資源識別子	HDL http://hdl.handle.net/2115/76692
関連	isVersionOf DOI https://doi.org/10.1109/TSM.2019.2944844
収録誌情報	PISSN 0894-6507 NCID AA10690454 en IEEE transactions on semiconductor manufacturing 巻32 号4 開始ページ489 終了ページ495
ファイル	fulltext IEEE_TSM_Horikiri_91983.pdf 3.04 MB (application/pdf) Issued2019-11
コンテンツ更新日時	2023-07-26