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タイトル	en Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor
作成者	en Ochi, Ryota en Maeda, Erika en Nabatame, Toshihide en Shiozaki, Koji en Sato, Taketomo NRID 1000050343009 en Hashizume, Tamotsu NRID 1000080149898
アクセス権	open access
権利情報	en Copyright (2020) Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License. https://creativecommons.org/licenses/by/4.0/ en Creative Commons Attribution 4.0 International
主題	NDC 420
内容注記	Abstract en Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/decade. For the metal–oxide-semiconductor (MOS) HEMT diode, we observed excellent capacitance–voltage (C–V) characteristics with negligible frequency dispersion. The detailed C–V analysis showed low state densities on the order of 1011 cm−2 eV−1 at the HfSiOx/AlGaN interface. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures up to 150 °C.
出版者	en American Institute of Physics (AIP)
日付	Issued2020-06-10
言語	und
資源タイプ	journal article
出版タイプ	VoR
資源識別子	HDL http://hdl.handle.net/2115/78882
関連	isIdenticalTo DOI https://doi.org/10.1063/5.0012687
収録誌情報	EISSN 2158-3226 en AIP Advances 巻10 号6 開始ページ065215
ファイル	fulltext 2020-AIP-Ad-Ochi.pdf 3.13 MB (application/pdf) Issued2020-06-10
コンテンツ更新日時	2023-07-26