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タイトル
  • en Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures
作成者
    • en Miwa, Kazuki
    • en Komatsu, Yuto
    • en Toguchi, Masachika
    • en Horikiri, Fumimasa
    • en Fukuhara, Noboru
    • en Narita, Yoshinobu
    • en Ichikawa, Osamu
    • en Isono, Ryota
    • en Tanaka, Takeshi
アクセス権 metadata only access
権利情報
主題
  • NDC 540
内容注記
  • Abstract en Contactless photo-electrochemical (PEC) etching was successfully demonstrated on AlGaN/GaN heterostructures using a K2S2O8 aqueous solution. The etching was conducted by a simple method such as just dipping the sample with Ti-cathode pads into the solution under UVC illumination. The etching morphology of the AlGaN surface was very smooth with an root mean square roughness of 0.24 nm. The etching was self-terminated in the AlGaN layer, whose residual thickness was 5 nm uniformly throughout the etched region. These contactless PEC etching features are promising for the fabrication of recessed-gate AlGaN/GaN high-electron-mobility transistors with high recessed-gate thickness reproducibility. (C) 2020 The Japan Society of Applied Physics
出版者 en IOP Publishing
日付
    Issued2020-02-01
言語
  • eng
資源タイプ journal article
出版タイプ NA
資源識別子 HDL http://hdl.handle.net/2115/79172
関連
  • isIdenticalTo DOI https://doi.org/10.35848/1882-0786/ab6f28
収録誌情報
    • PISSN 1882-0778
    • NCID AA12295133
      • en Applied Physics Express (APEX)
      • 巻13 号2 開始ページ026508
コンテンツ更新日時 2023-07-26