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Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)
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| アクセス権 |
metadata only access |
| 権利情報 |
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Copyright 2021 Authors. This article is distributed under a Creative Commons Attribution (CC BY) License.
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Abstract
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Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the same chip. After tetramethylammonium hydroxide post-treatment, the root-mean-square roughness of the etched surface was around 0.4 nm, which had smoothness comparable to that of the unetched surface. Recessed-Schottky HEMTs showed a positive shift in V-th, the suppression of drain leakage currents, and an improvement in the subthreshold-slope value as compared with planar-gate HEMTs. By applying a metal-insulator-semiconductor (MIS)-gate structure, the gate and drain leakage currents were significantly reduced, leading to an increased input dynamic range. Furthermore, the standard deviations (sigma) of the V-th of CL-PEC-etched recessed-Schottky HEMTs and recessed-MIS HEMTs were very small, 5.5 and 16.7 mV, respectively. These results showed that the CL-PEC etching process is promising for the fabrication of recessed-gate AlGaN/GaN HEMTs having excellent uniformity for normally-off device operations.
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| 出版者 |
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American Institute of Physics (AIP)
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| 日付 |
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| 言語 |
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| 資源タイプ |
journal article |
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NA |
| 資源識別子 |
HDL
http://hdl.handle.net/2115/82407
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DOI
https://doi.org/10.1063/5.0051045
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| 収録誌情報 |
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PISSN
0021-8979
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EISSN
1089-7550
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NCID
AA00693547
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Journal of Applied Physics
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巻130
号2
開始ページ24501
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| コンテンツ更新日時 |
2023-07-26 |
