Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment

Shimauchi Michihito; Miwa Kazuki; Toguchi Masachika; Sato Taketomo; Motohisa Junichi

タイトル	en Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment
作成者	en Shimauchi, Michihito en Miwa, Kazuki en Toguchi, Masachika en Sato, Taketomo NRID 1000050343009 en Motohisa, Junichi NRID 1000060212263
アクセス権	metadata only access
権利情報	en ©2021 The Japan Society of Applied Physics
主題	Other en GaN Other en Electrochemial etching Other en nanowire NDC 540
内容注記	Abstract en We attempted to fabricate GaN nanowires by electrodeless photo-assisted electrochemical (PEC) etching and successive alkaline solution treatment. The sample consisting of n(+)-doped and unintentionally doped GaN grown on a GaN substrate was selectively etched using a Ti mask in a mixed solution of K2S2O8 and KOH under UV light radiation. This specific layer structure required a relatively concentrated KOH solution for etching. The PEC etching resulted in the formation of a tapered cone structure of GaN with its top diameter determined by the mask size. Successive KOH treatment after PEC etching yielded GaN nanowires with diameters of about 220 nm.
出版者	en IOP Publishing
日付	Issued2021-11-01
言語	eng
資源タイプ	journal article
出版タイプ	NA
資源識別子	HDL http://hdl.handle.net/2115/83317
関連	isIdenticalTo DOI https://doi.org/10.35848/1882-0786/ac2d45
収録誌情報	PISSN 1882-0778 NCID AA12295133 en Applied Physics Express (APEX) 巻14 号11 開始ページ111003
コンテンツ更新日時	2023-07-26