| Title |
-
ja
表面波励起プラズマによる中性水素原子生成とレジストアッシングへの応用
-
en
Neutral Hydrogen Atom Generation by Surface Wave Excitation Plasma and Its Application to Resist Ashing
|
| Creator |
-
-
ja
福田, 永
en
FUKUDA, Hisashi
ja-Kana
フクダ, ヒサシ
-
-
ja
田中, 茂雄
en
TANAKA, Shigeo
ja-Kana
タナカ, シゲオ
-
-
ja
渡邊, 幹夫
en
WATANABE, Mikio
ja-Kana
ワタナベ, ミキオ
-
-
ja
佐藤, 孝紀
ja-Kana
サトウ, コウキ
en
SATOH, Kohki
-
-
ja
古川, 雅一
en
FURUKAWA, Masakazu
ja-Kana
フルカワ, マサカズ
|
| Accessrights |
open access |
| Rights |
|
| Subject |
-
NDC
549
-
Other
en
plasma processing
-
Other
en
silicon process technology
-
Other
en
ashing
-
Other
en
neutral hydrogen
|
| Description |
-
Other
application/pdf
-
Abstract
en
High density plasma is required for plasma processing in future ULSI fabrication. In this study, 2.45 GHz microwave of the TM01 mode in the circular wave guide was introduced through a dielectric disk plate window for generation of excited surface wave plasma. A high dose ion implanted resist ashing is performed using this apparatus. In the temperature rangeof 60 to 150 ℃, ashing rate for neutral hydrogen irradiation is higher than that of oxygen plasma. The results indicate that resist removal by hydrogen atoms is advantageous to enableto oxygen free and low temperature ashing.
-
Other
ja
特集 : 「2003年度実施の地域との共同研究の報告」
|
| Publisher |
ja
室蘭工業大学
|
| Date |
|
| Language |
|
| Resource Type |
departmental bulletin paper |
| Version Type |
VoR |
| Identifier |
HDL
http://hdl.handle.net/10258/62
,
URI
https://muroran-it.repo.nii.ac.jp/records/8405
|
| Relation |
-
isIdenticalTo
NAID
110001263633
|
| Journal |
-
-
PISSN
13442708
-
NCID
AA11912609
-
ja
室蘭工業大学紀要
en
Memoirs of the Muroran Institute of Technology
-
Volume Number54
Page Start29
Page End35
|
| File |
|
| Oaidate |
2024-01-26 |
