| タイトル |
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Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge
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| 作成者 |
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| アクセス権 |
open access |
| 主題 |
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Other
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porous structure
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Other
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gallium nitride
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Other
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photoabsorption
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Other
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Franz-Keldysh effect
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NDC
549
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| 内容注記 |
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Abstract
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Photoresponse and photoabsorption properties of GaN porous structures were investigated by measuring photocurrent and spectroscopic photoabsorption under monochromatic light with various wavelengths. The measured photocurrents on the porous GaN electrodes were larger than those on the planar electrodes due to the unique features of the former electrode, such as large surface area and low photoreflectance properties. Moreover, the photocurrents were observed even under illumination with wavelength of 380 nm, corresponding to photon energy of 3.26 eV, which is 130 meV lower than the bandgap energy of bulk GaN. A potential simulation revealed that a high-electric field was induced at the pore tips due to modification of the potential in the porous structures. The observed redshift of the photoabsorption edge can be qualitatively explained by the Franz-Keldysh effect.
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| 出版者 |
en
IOP Publishing
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| 日付 |
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| 言語 |
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| 資源タイプ |
journal article |
| 出版タイプ |
AM |
| 資源識別子 |
HDL
http://hdl.handle.net/2115/63948
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| 関連 |
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isVersionOf
DOI
https://doi.org/10.1088/0268-1242/31/1/014012
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| 収録誌情報 |
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Semiconductor science and technology
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巻31
号1
開始ページ14012
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| ファイル |
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| コンテンツ更新日時 |
2023-07-26 |
