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Title
  • en Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge
Creator
    • en Kumazaki, Yusuke
    • en Kida, Hirofumi
    • en Watanabe, Akio
    • en Yatabe, Zenji
    • en Matsuda, Soichiro
Accessrights open access
Subject
  • Other en porous structure
  • Other en gallium nitride
  • Other en photoabsorption
  • Other en Franz-Keldysh effect
  • NDC 549
Description
  • Abstract en Photoresponse and photoabsorption properties of GaN porous structures were investigated by measuring photocurrent and spectroscopic photoabsorption under monochromatic light with various wavelengths. The measured photocurrents on the porous GaN electrodes were larger than those on the planar electrodes due to the unique features of the former electrode, such as large surface area and low photoreflectance properties. Moreover, the photocurrents were observed even under illumination with wavelength of 380 nm, corresponding to photon energy of 3.26 eV, which is 130 meV lower than the bandgap energy of bulk GaN. A potential simulation revealed that a high-electric field was induced at the pore tips due to modification of the potential in the porous structures. The observed redshift of the photoabsorption edge can be qualitatively explained by the Franz-Keldysh effect.
Publisher en IOP Publishing
Date
    Issued2016-01
Language
  • eng
Resource Type journal article
Version Type AM
Identifier HDL http://hdl.handle.net/2115/63948
Relation
  • isVersionOf DOI https://doi.org/10.1088/0268-1242/31/1/014012
Journal
    • PISSN 0268-1242
      • en Semiconductor science and technology
      • Volume Number31 Issue Number1 Page Start14012
File
Oaidate 2023-07-26