| タイトル |
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en
Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect
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| 作成者 |
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| アクセス権 |
metadata only access |
| 権利情報 |
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| 主題 |
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Other
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Etching - Electrochemical
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Other
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electrochemical etching
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Other
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gallium nitride
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Other
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sub-bandgap absorption
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NDC
540
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| 内容注記 |
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Abstract
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Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated by sub-bandgap absorption has been developed. Sub-bandgap light with a photon energy below the bandgap energy was transmitted through bulk GaN, but a certain type of photo-absorption additively occurred at the pore tip due to the Franz-Keldysh effect. The photocurrents observed when the reverse bias was applied to n-GaN were well reproduced by calculation taking into account the Frantz-Keldysh effect. The pore diameter was not changed that much, but the pore depth could be successfully controlled by the intensity and irradiation time of the sub-bandgap light. (C) The Author(s) 2019. Published by ECS.
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| 出版者 |
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The Electrochemical Society (ECS)
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| 日付 |
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| 言語 |
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| 資源タイプ |
journal article |
| 出版タイプ |
NA |
| 資源識別子 |
HDL
http://hdl.handle.net/2115/75274
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| 関連 |
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isIdenticalTo
DOI
https://doi.org/10.1149/2.0551912jes
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| 収録誌情報 |
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PISSN
0013-4651
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NCID
AA00697016
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Journal of the electrochemical society
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巻166
号12
開始ページH510
終了ページH512
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| コンテンツ更新日時 |
2023-07-26 |
