| Title |
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en
Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect
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| Creator |
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| Accessrights |
metadata only access |
| Rights |
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| Subject |
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Other
en
Etching - Electrochemical
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Other
en
electrochemical etching
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Other
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gallium nitride
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Other
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sub-bandgap absorption
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NDC
540
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| Description |
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Abstract
en
Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated by sub-bandgap absorption has been developed. Sub-bandgap light with a photon energy below the bandgap energy was transmitted through bulk GaN, but a certain type of photo-absorption additively occurred at the pore tip due to the Franz-Keldysh effect. The photocurrents observed when the reverse bias was applied to n-GaN were well reproduced by calculation taking into account the Frantz-Keldysh effect. The pore diameter was not changed that much, but the pore depth could be successfully controlled by the intensity and irradiation time of the sub-bandgap light. (C) The Author(s) 2019. Published by ECS.
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| Publisher |
en
The Electrochemical Society (ECS)
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| Date |
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| Language |
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| Resource Type |
journal article |
| Version Type |
NA |
| Identifier |
HDL
http://hdl.handle.net/2115/75274
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| Relation |
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isIdenticalTo
DOI
https://doi.org/10.1149/2.0551912jes
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| Journal |
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PISSN
0013-4651
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NCID
AA00697016
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en
Journal of the electrochemical society
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Volume Number166
Issue Number12
Page StartH510
Page EndH512
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| Oaidate |
2023-07-26 |
