Title |
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Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2
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Accessrights |
open access |
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©2014 American Physical Society
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Subject |
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Description |
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Abstract
en
The electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x = 0-0.06) grown on alpha-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of vertical bar S vertical bar values accompanied by MI transition was observed, and the transition temperatures of S (T-S) decreased with x in a good linear relation with MI transition temperatures. vertical bar S vertical bar values of V1-xWxO2 films at T > T-S were constant at low values of 23 mu VK-1 independently of x, which reflects a metallic electronic structure, whereas those at T < T-S almost linearly decreased with logarithmic W concentrations. The gradient of -213 mu VK-1 agrees well with -k(B)/e ln10 (-198 mu VK-1), suggesting that V1-xWxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.
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Publisher |
en
American Physical Society
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Date |
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Language |
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Resource Type |
journal article |
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VoR |
Identifier |
HDL
http://hdl.handle.net/2115/57966
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Relation |
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isIdenticalTo
DOI
https://doi.org/10.1103/PhysRevB.90.161105
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Journal |
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PISSN
1098-0121
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EISSN
1550-235X
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NCID
AA11187113
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en
Physical review. B
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Volume Number90
Issue Number16
Page Start161105-1
Page End161105-4
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File |
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Oaidate |
2023-07-26 |