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Title
  • en Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2
Creator
    • en Katase, Takayoshi
    • en Endo, Kenji
Accessrights open access
Rights
  • en ©2014 American Physical Society
Subject
  • NDC 549
Description
  • Abstract en The electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x = 0-0.06) grown on alpha-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of vertical bar S vertical bar values accompanied by MI transition was observed, and the transition temperatures of S (T-S) decreased with x in a good linear relation with MI transition temperatures. vertical bar S vertical bar values of V1-xWxO2 films at T > T-S were constant at low values of 23 mu VK-1 independently of x, which reflects a metallic electronic structure, whereas those at T < T-S almost linearly decreased with logarithmic W concentrations. The gradient of -213 mu VK-1 agrees well with -k(B)/e ln10 (-198 mu VK-1), suggesting that V1-xWxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.
Publisher en American Physical Society
Date
    Issued2014-10-21
Language
  • eng
Resource Type journal article
Version Type VoR
Identifier HDL http://hdl.handle.net/2115/57966
Relation
  • isIdenticalTo DOI https://doi.org/10.1103/PhysRevB.90.161105
Journal
    • PISSN 1098-0121
    • EISSN 1550-235X
    • NCID AA11187113
      • en Physical review. B
      • Volume Number90 Issue Number16 Page Start161105-1 Page End161105-4
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Oaidate 2023-07-26