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Title
  • en Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN
Creator
    • en Matsumoto, Satoru
    • en Toguchi, Masachika
    • en Takeda, Kentaro
    • en Narita, Tetsuo
    • en Kachi, Tetsu
Accessrights open access
Rights
  • en ©2018 The Japan Society of Applied Physics
Subject
  • NDC 540
Description
  • Abstract en We investigated the ability of a photo-assisted electrochemical (PEC) etching process to remove the damage that dry etching causes in the near-surface region of GaN samples. The process consists of anodic oxidation of the GaN surface and subsequent dissolution of the oxide with a chemical treatment, and the extent of the PEC reactions depends on the total charge density transferred in them. The PEC process was conducted for samples prepared with various dry-etching conditions followed by fabrication of Schottky barrier diodes (SBDs) and metal-insulatorsemiconductor (MIS) capacitors. The PEC process greatly improved the barrier height, ideality factor, and reverse leakage current of SBDs. Capacitance-voltage measurements of MIS capacitors revealed that the densities of interface states and discrete traps were both reduced by the PEC process. The results obtained here show that the PEC process can remove dry-etching damage from the GaN surface. (C) 2018 The Japan Society of Applied Physics
Publisher en IOP Publishing
Date
    Issued2018-12
Language
  • eng
Resource Type journal article
Version Type AM
Identifier HDL http://hdl.handle.net/2115/76058
Relation
  • isVersionOf DOI https://doi.org/10.7567/JJAP.57.121001
Journal
    • PISSN 0021-4922
      • en Japanese Journal of Applied Physics (JJAP)
      • Volume Number57 Issue Number12 Page Start121001
File
Oaidate 2023-07-26